Variation Study and Implications for BJT-Based Thin-Body Capacitorless DRAMHEE CHO, Min; KING LIU, Tsu-Jae.IEEE electron device letters. 2012, Vol 33, Num 3, pp 312-314, issn 0741-3106, 3 p.Article

Spacer Gate Lithography for Reduced Variability Due to Line Edge RoughnessXIN SUN; KING LIU, Tsu-Jae.IEEE transactions on semiconductor manufacturing. 2010, Vol 23, Num 2, pp 311-315, issn 0894-6507, 5 p.Article

Design Requirements for Steeply Switching Logic DevicesKAM, Hei; KING LIU, Tsu-Jae; ALON, Elad et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 326-334, issn 0018-9383, 9 p.Article

Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain TunnelingHO, Byron; NUO XU; KING LIU, Tsu-Jae et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 2895-2902, issn 0018-9383, 8 p.Article

Low-Standby-Power Bulk MOSFET Design Using High-k Trench IsolationVEGA, Reinaldo A; KING LIU, Tsu-Jae.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1380-1382, issn 0741-3106, 3 p.Article

Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFETDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; KING LIU, Tsu-Jae et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 184-186, issn 0741-3106, 3 p.Article

Adhesive Force Characterization for MEM Logic Relays With Sub-Micron Contacting RegionsJACK YAUNG; HUTIN, Louis; JAESEOK JEON et al.Journal of microelectromechanical systems. 2014, Vol 23, Num 1, pp 198-203, issn 1057-7157, 6 p.Article

Electrical Characterization of Etch Rate for Micro- and Nano-Scale Gap FormationLEE, Donovan; TRAN, Helen; HO, Byron et al.Journal of microelectromechanical systems. 2010, Vol 19, Num 5, pp 1260-1263, issn 1057-7157, 4 p.Article

Design Optimization of Multigate Bulk MOSFETsHO, Byron; XIN SUN; SHIN, Changhwan et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 28-33, issn 0018-9383, 6 p.Article

Raised-Source/Drain Double-Gate Transistor Design Optimization for Low Operating PowerCHEN, Deirdre; JACOBSON, Zachery A; KING LIU, Tsu-Jae et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 3, pp 1040-1045, issn 0018-9383, 6 p.Article

Characterization of polycrystalline silicon-germanium film deposition for modularly integrated MEMS applicationsLOW, Carrie W; KING LIU, Tsu-Jae; HOWE, Roger T et al.Journal of microelectromechanical systems. 2007, Vol 16, Num 1, pp 68-77, issn 1057-7157, 10 p.Article

A New Switching Device for Printed Electronics: Inkjet-Printed Microelectromechanical RelayEUNG SEOK PARK; YENHAO CHEN; KING LIU, Tsu-Jae et al.Nano letters (Print). 2013, Vol 13, Num 11, pp 5355-5360, issn 1530-6984, 6 p.Article

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET PerformanceDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; CHANGHWAN SHIN et al.IEEE transactions on nanotechnology. 2013, Vol 12, Num 6, pp 1061-1067, issn 1536-125X, 7 p.Article

Characterization of Dynamic SRAM Stability in 45 nm CMOSSENG OON TOH; ZHENG GUO; KING LIU, Tsu-Jae et al.IEEE journal of solid-state circuits. 2011, Vol 46, Num 11, pp 2702-2712, issn 0018-9200, 11 p.Article

MOSFET design for forward body biasing schemeHOKAZONO, Akira; BALASUBRAMANIAN, Sriram; ISHIMARU, Kazunari et al.IEEE electron device letters. 2006, Vol 27, Num 5, pp 387-389, issn 0741-3106, 3 p.Article

Planar GeOI TFET Performance Improvement With Back BiasingMATHEU, Peter; HO, Byron; JACOBSON, Zachery A et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1629-1635, issn 0018-9383, 7 p.Article

Effectiveness of Stressors in Aggressively Scaled FinFETsNUO XU; HO, Byron; CHOI, Munkang et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1592-1598, issn 0018-9383, 7 p.Article

SRAM Read/Write Margin Enhancements Using FinFETsCARLSON, Andrew; ZHENG GUO; BALASUBRAMANIAN, Sriram et al.IEEE transactions on very large scale integration (VLSI) systems. 2010, Vol 18, Num 6, pp 887-900, issn 1063-8210, 14 p.Article

Characterization of Contact Resistance Stability in MEM Relays With Tungsten ElectrodesYENHAO CHEN; NATHANAEL, Rhesa; JEON, Jaeseok et al.Journal of microelectromechanical systems. 2012, Vol 21, Num 3, pp 511-513, issn 1057-7157, 3 p.Article

A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET StructureLEE, Sunyeong; YONG WOO JEON; KING LIU, Tsu-Jae et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1728-1736, issn 0018-9383, 9 p.Article

Large-Scale SRAM Variability Characterization in 45 nm CMOSZHENG GUO; CARLSON, Andrew; PANG, Liang-Teck et al.IEEE journal of solid-state circuits. 2009, Vol 44, Num 11, pp 3174-3192, issn 0018-9200, 19 p.Article

Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO₂ and GeO₂LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Tunnel Field Effect Transistor With Raised Germanium SourceSUNG HWAN KIM; AGARWAL, Sapan; JACOBSON, Zachery A et al.IEEE electron device letters. 2010, Vol 31, Num 10, pp 1107-1109, issn 0741-3106, 3 p.Article

45nm-Generation Parameter-Specific Ring Oscillator MonitorsWANG, Lynn T.-N; NUO XU; KING LIU, Tsu-Jae et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7641, issn 0277-786X, isbn 978-0-8194-8055-2 0-8194-8055-X, 76410N.1-76410N.9Conference Paper